MCQ Questions for Class 12 Physics Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits with Answers

Students are advised to practice the NCERT MCQ Questions for Class 12 Physics Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits with Answers Pdf free download is available here. MCQ Questions for Class 12 Physics with Answers are prepared as per the Latest Exam Pattern. Students can solve these Semiconductor Electronics: Materials, Devices and Simple Circuits Class 12 MCQs Questions with Answers and assess their preparation level.

Semiconductor Electronics: Materials, Devices and Simple Circuits Class 12 MCQs Questions with Answers

Solving the Semiconductor Electronics: Materials, Devices and Simple Circuits Multiple Choice Questions of Class 12 Physics Chapter 14 MCQ can be of extreme help as you will be aware of all the concepts. These MCQ Questions on Semiconductor Electronics: Materials, Devices and Simple Circuits Class 12 with answers pave for a quick revision of the Chapter thereby helping you to enhance subject knowledge. Have a glance at the MCQ of Chapter 14 Physics Class 12 and cross-check your answers during preparation.

I. Choose the correct answer

Question 1.
In the figure, assuming the diodes to be ideal,
MCQ Questions for Class 12 Physics Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits with Answers 1
(a) D1 is forward biased and D2 is reverse biased and hence current flows from A to B.
(b) D2 is forward biased and D1 is reverse biased and hence no current flows from B to A and vice versa.
(c) D1 and D2 are both forward biased and hence current flows from A to B.
(d) D1 and D2 are both reverse biased and hence no current flows from A to B and vice versa.

Answer

Answer: (b) D2 is forward biased and D1 is reverse biased and hence no current flows from B to A and vice versa.


Question 2.
Hole is
(a) an anti-particle of electron.
(b) a vacancy created when an electron leaves a covalent bond.
(c) absence of free electrons.
(d) an artificially created particle.

Answer

Answer: (b) a vacancy created when an electron leaves a covalent bond.


Question 3.
For the depletion region of a diode which one is incorrect?
(a) There are no mobile charges.
(b) Equal number of holes and electrons exists, making the region neutral.
(c) Recombination of holes and electrons has taken place.
(d) Immobile charged ions exist.

Answer

Answer: (a) There are no mobile charges.


Question 4.
To reduce the ripples in a rectifier circuit with capacitor filter which one is false?
(a) RL should be increased.
(b) Input frequency should be decreased.
(c) Input frequency should be increased.
(d) Capacitors with high capacitance should be used.

Answer

Answer: (b) Input frequency should be decreased.


Question 5.
Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to (Eg)C, (Eg)Si and (Eg) Ge. Which of the following statements is true?
(a) (Eg)Si < (Eg)Ge < (Eg)C
(b) (Eg)C < (Eg)Ge > (Eg)Si
(c) (Eg)C > (Eg)Si > (Eg)Ge
(d) (Eg)C = (Eg)Si = (Eg)Ge

Answer

Answer: (c) (Eg)C > (Eg)Si > (Eg)Ge


Question 6.
In an unbiased p-n junction, holes diffuse from the p-region to n-region because
(a) free electrons in the n-region attract them.
(b) they move across the junction by the potential difference.
(c) hole concentration in p-region is more as compared to n-region.
(d) All the above.

Answer

Answer: (c) hole concentration in p-region is more as compared to n-region.


Question 7.
In a p-n junction diode, change in temperature due to heating:
(a) affects only reverse resistance
(b) affects only forward resistance
(c) Does not affect resistance of p-n junction
(d) affects the overall V-I characteristics of p-n junction

Answer

Answer: (d) affects the overall V-I characteristics of p-n junction


Question 8.
A specimen of silicon is to be made p-type semiconductor for this one atom of indium, on an average, is doped in 5 × 107 silicon atoms. If the number density of silicon is 5 × 1022 atoms m-3, then the number of acceptor atoms per cm³ will be
(a) 2.5 × 1030
(b) 1.0 × 1013
(c) 1.0 × 1015
(d) 2.5 × 1036

Answer

Answer: (c) 1.0 × 1015


Question 9.
The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance R1 will be:
MCQ Questions for Class 12 Physics Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits with Answers 2
(a) 1.43 A
(b) 3.13 A
(c) 2.5 A
(d) 10.0 A

Answer

Answer: (c) 2.5 A


Question 10.
Consider the junction diode as ideal. The value of current flowing through AB is:
MCQ Questions for Class 12 Physics Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits with Answers 3
(a) 0 A
(b) 10-2A
(c) 10-1 A
(d) 10-3 A

Answer

Answer: (b) 10-2A


II. Fill in the blanks

Question 1.
At room temperature …………………… is the energy gap for silicon.

Answer

Answer: 1.12 eV


Question 2.
A pure semiconductor which is free of impurity is called …………………… semiconductor.

Answer

Answer: Intrinsic


Question 3.
When an impurity is added to a pure semiconductor it becomes …………………… semiconductor.

Answer

Answer: Extrinsic


Question 4.
There are …………………… types of extrinsic semiconductors.

Answer

Answer: Two


Question 5.
Mobility of hole is …………………… than that of electrons.

Answer

Answer: Less


Question 6.
…………………… is deliberate addition of desirable impurity atoms into an intrinsic semiconductor to increase its electrical conductivity.

Answer

Answer: Doping


Question 7.
…………………… type is obtained by doping an intrinsic semiconductor with a pentavalent impurity.

Answer

Answer: n


Question 8.
…………………… type is obtained by doping an intrinsic semiconductor with a trivalent impurity.

Answer

Answer: P


Question 9.
…………………… are the majority carriers in N-type semiconductor.

Answer

Answer: Electrons


Question 10.
…………………… are the majority carriers in P-type semiconductor.

Answer

Answer: Holes


Question 11.
Two important processes that occur during the formation of a p-n junction are …………………… and ……………………

Answer

Answer: diffusion and drift


Question 12.
The …………………… is the fictitious battery, which seems to be connected across the junction with its positive terminal in the n-region and the negative terminal in the p-region.

Answer

Answer: potential barrier


Question 13.
The region around the junction, which is devoid of any mobile charge carriers, is called the ……………………

Answer

Answer: depletion layer or region


Question 14.
In p-n junction diode there is a …………………… of majority carriers across the junction in forward bias.

Answer

Answer: Diffusion


Question 15.
A p-n junction is said to be …………………… based if the p-type semiconductor is connected to the positive terminal and the n-type semiconductor is connected to the negative terminal of an external battery.

Answer

Answer: Forward


Question 16.
The resistance of p-n junction is …………………… when reverse biased.

Answer

Answer: High


Question 17.
A …………………… is a device, which converts ac into pulsating dc, i.e. unidirectional current.

Answer

Answer: rectifier


Question 18.
The output frequency of the half wave rectifier is …………………… as the input frequency.

Answer

Answer: same


Question 19.
LED works under …………………… bias.

Answer

Answer: Forward


Question 20.
The Zener diode is always …………………… biased.

Answer

Answer: reverse


Question 21.
A photo diode is always …………………… biased.

Answer

Answer: 1.8 eV


Question 22.
The semiconductor used for fabrication of visible LEDs must at least have a band gap of ……………………

Answer

Answer: Reverse


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