{"id":19084,"date":"2021-02-19T17:56:05","date_gmt":"2021-02-19T12:26:05","guid":{"rendered":"https:\/\/ncertsolutions.guru\/?p=19084"},"modified":"2021-02-19T17:56:05","modified_gmt":"2021-02-19T12:26:05","slug":"mcq-questions-for-class-12-physics-chapter-14","status":"publish","type":"post","link":"https:\/\/ncertsolutions.guru\/mcq-questions-for-class-12-physics-chapter-14\/","title":{"rendered":"MCQ Questions for Class 12 Physics Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits with Answers"},"content":{"rendered":"

Students are advised to practice the NCERT MCQ Questions for Class 12 Physics Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits with Answers Pdf free download is available here. MCQ Questions for Class 12 Physics with Answers<\/a> are prepared as per the Latest Exam Pattern. Students can solve these Semiconductor Electronics: Materials, Devices and Simple Circuits Class 12 MCQs Questions with Answers and assess their preparation level.<\/p>\n

Semiconductor Electronics: Materials, Devices and Simple Circuits Class 12 MCQs Questions with Answers<\/h2>\n

Solving the Semiconductor Electronics: Materials, Devices and Simple Circuits Multiple Choice Questions of Class 12 Physics Chapter 14 MCQ can be of extreme help as you will be aware of all the concepts. These MCQ Questions on Semiconductor Electronics: Materials, Devices and Simple Circuits Class 12 with answers pave for a quick revision of the Chapter thereby helping you to enhance subject knowledge. Have a glance at the MCQ of Chapter 14 Physics Class 12 and cross-check your answers during preparation.<\/p>\n

I. Choose the correct answer<\/span><\/p>\n

Question 1.
\nIn the figure, assuming the diodes to be ideal,
\n\"MCQ
\n(a) D1<\/sub> is forward biased and D2<\/sub> is reverse biased and hence current flows from A to B.
\n(b) D2<\/sub> is forward biased and D1<\/sub> is reverse biased and hence no current flows from B to A and vice versa.
\n(c) D1<\/sub> and D2<\/sub> are both forward biased and hence current flows from A to B.
\n(d) D1<\/sub> and D2<\/sub> are both reverse biased and hence no current flows from A to B and vice versa.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: (b) D2<\/sub> is forward biased and D1<\/sub> is reverse biased and hence no current flows from B to A and vice versa.<\/p>\n<\/details>\n

\n

Question 2.
\nHole is
\n(a) an anti-particle of electron.
\n(b) a vacancy created when an electron leaves a covalent bond.
\n(c) absence of free electrons.
\n(d) an artificially created particle.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: (b) a vacancy created when an electron leaves a covalent bond.<\/p>\n<\/details>\n

\n

Question 3.
\nFor the depletion region of a diode which one is incorrect?
\n(a) There are no mobile charges.
\n(b) Equal number of holes and electrons exists, making the region neutral.
\n(c) Recombination of holes and electrons has taken place.
\n(d) Immobile charged ions exist.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: (a) There are no mobile charges.<\/p>\n<\/details>\n

\n

Question 4.
\nTo reduce the ripples in a rectifier circuit with capacitor filter which one is false?
\n(a) RL<\/sub> should be increased.
\n(b) Input frequency should be decreased.
\n(c) Input frequency should be increased.
\n(d) Capacitors with high capacitance should be used.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: (b) Input frequency should be decreased.<\/p>\n<\/details>\n

\n

Question 5.
\nCarbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to (Eg<\/sub>)C, (Eg<\/sub>)Si and (Eg<\/sub>) Ge. Which of the following statements is true?
\n(a) (Eg<\/sub>)Si < (Eg<\/sub>)Ge < (Eg<\/sub>)C
\n(b) (Eg<\/sub>)C < (Eg<\/sub>)Ge > (Eg<\/sub>)Si
\n(c) (Eg<\/sub>)C > (Eg<\/sub>)Si > (Eg<\/sub>)Ge
\n(d) (Eg<\/sub>)C = (Eg<\/sub>)Si = (Eg<\/sub>)Ge<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: (c) (Eg<\/sub>)C > (Eg<\/sub>)Si > (Eg<\/sub>)Ge<\/p>\n<\/details>\n

\n

Question 6.
\nIn an unbiased p-n junction, holes diffuse from the p-region to n-region because
\n(a) free electrons in the n-region attract them.
\n(b) they move across the junction by the potential difference.
\n(c) hole concentration in p-region is more as compared to n-region.
\n(d) All the above.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: (c) hole concentration in p-region is more as compared to n-region.<\/p>\n<\/details>\n

\n

Question 7.
\nIn a p-n junction diode, change in temperature due to heating:
\n(a) affects only reverse resistance
\n(b) affects only forward resistance
\n(c) Does not affect resistance of p-n junction
\n(d) affects the overall V-I characteristics of p-n junction<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: (d) affects the overall V-I characteristics of p-n junction<\/p>\n<\/details>\n

\n

Question 8.
\nA specimen of silicon is to be made p-type semiconductor for this one atom of indium, on an average, is doped in 5 \u00d7 107<\/sup> silicon atoms. If the number density of silicon is 5 \u00d7 1022<\/sup> atoms m-3<\/sup>, then the number of acceptor atoms per cm\u00b3 will be
\n(a) 2.5 \u00d7 1030<\/sup>
\n(b) 1.0 \u00d7 1013<\/sup>
\n(c) 1.0 \u00d7 1015<\/sup>
\n(d) 2.5 \u00d7 1036<\/sup><\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: (c) 1.0 \u00d7 1015<\/sup><\/p>\n<\/details>\n

\n

Question 9.
\nThe given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance R1<\/sub> will be:
\n\"MCQ
\n(a) 1.43 A
\n(b) 3.13 A
\n(c) 2.5 A
\n(d) 10.0 A<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: (c) 2.5 A<\/p>\n<\/details>\n

\n

Question 10.
\nConsider the junction diode as ideal. The value of current flowing through AB is:
\n\"MCQ
\n(a) 0 A
\n(b) 10-2<\/sup>A
\n(c) 10-1<\/sup> A
\n(d) 10-3<\/sup> A<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: (b) 10-2<\/sup>A<\/p>\n<\/details>\n

\n

II. Fill in the blanks<\/span><\/p>\n

Question 1.
\nAt room temperature …………………… is the energy gap for silicon.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: 1.12 eV<\/p>\n<\/details>\n

\n

Question 2.
\nA pure semiconductor which is free of impurity is called …………………… semiconductor.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: Intrinsic<\/p>\n<\/details>\n

\n

Question 3.
\nWhen an impurity is added to a pure semiconductor it becomes …………………… semiconductor.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: Extrinsic<\/p>\n<\/details>\n

\n

Question 4.
\nThere are …………………… types of extrinsic semiconductors.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: Two<\/p>\n<\/details>\n

\n

Question 5.
\nMobility of hole is …………………… than that of electrons.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: Less<\/p>\n<\/details>\n

\n

Question 6.
\n…………………… is deliberate addition of desirable impurity atoms into an intrinsic semiconductor to increase its electrical conductivity.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: Doping<\/p>\n<\/details>\n

\n

Question 7.
\n…………………… type is obtained by doping an intrinsic semiconductor with a pentavalent impurity.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: n<\/p>\n<\/details>\n

\n

Question 8.
\n…………………… type is obtained by doping an intrinsic semiconductor with a trivalent impurity.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: P<\/p>\n<\/details>\n

\n

Question 9.
\n…………………… are the majority carriers in N-type semiconductor.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: Electrons<\/p>\n<\/details>\n

\n

Question 10.
\n…………………… are the majority carriers in P-type semiconductor.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: Holes<\/p>\n<\/details>\n

\n

Question 11.
\nTwo important processes that occur during the formation of a p-n junction are …………………… and ……………………<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: diffusion and drift<\/p>\n<\/details>\n

\n

Question 12.
\nThe …………………… is the fictitious battery, which seems to be connected across the junction with its positive terminal in the n-region and the negative terminal in the p-region.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: potential barrier<\/p>\n<\/details>\n

\n

Question 13.
\nThe region around the junction, which is devoid of any mobile charge carriers, is called the ……………………<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: depletion layer or region<\/p>\n<\/details>\n

\n

Question 14.
\nIn p-n junction diode there is a …………………… of majority carriers across the junction in forward bias.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: Diffusion<\/p>\n<\/details>\n

\n

Question 15.
\nA p-n junction is said to be …………………… based if the p-type semiconductor is connected to the positive terminal and the n-type semiconductor is connected to the negative terminal of an external battery.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: Forward<\/p>\n<\/details>\n

\n

Question 16.
\nThe resistance of p-n junction is …………………… when reverse biased.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: High<\/p>\n<\/details>\n

\n

Question 17.
\nA …………………… is a device, which converts ac into pulsating dc, i.e. unidirectional current.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: rectifier<\/p>\n<\/details>\n

\n

Question 18.
\nThe output frequency of the half wave rectifier is …………………… as the input frequency.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: same<\/p>\n<\/details>\n

\n

Question 19.
\nLED works under …………………… bias.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: Forward<\/p>\n<\/details>\n

\n

Question 20.
\nThe Zener diode is always …………………… biased.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: reverse<\/p>\n<\/details>\n

\n

Question 21.
\nA photo diode is always …………………… biased.<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: 1.8 eV<\/p>\n<\/details>\n

\n

Question 22.
\nThe semiconductor used for fabrication of visible LEDs must at least have a band gap of ……………………<\/p>\n

\nAnswer<\/span><\/summary>\n

Answer: Reverse<\/p>\n<\/details>\n

\n

Hope the information shared regarding the NCERT MCQ Questions for Class 12 Physics Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits with Answers Pdf free download is true and genuine as far as our knowledge is concerned. If you feel any information regarding CBSE Class 12 Physics Semiconductor Electronics: Materials, Devices and Simple Circuits MCQs Multiple Choice Questions with Answers is missing do reach us and we will look into it and add it accordingly.<\/p>\n","protected":false},"excerpt":{"rendered":"

Students are advised to practice the NCERT MCQ Questions for Class 12 Physics Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits with Answers Pdf free download is available here. MCQ Questions for Class 12 Physics with Answers are prepared as per the Latest Exam Pattern. Students can solve these Semiconductor Electronics: Materials, Devices and …<\/p>\n

MCQ Questions for Class 12 Physics Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits with Answers<\/span> Read More »<\/a><\/p>\n","protected":false},"author":9,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"spay_email":""},"categories":[35],"tags":[],"yoast_head":"\nMCQ Questions for Class 12 Physics Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits with Answers - NCERT Solutions<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/ncertsolutions.guru\/mcq-questions-for-class-12-physics-chapter-14\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"MCQ Questions for Class 12 Physics Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits with Answers - NCERT Solutions\" \/>\n<meta property=\"og:description\" content=\"Students are advised to practice the NCERT MCQ Questions for Class 12 Physics Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits with Answers Pdf free download is available here. 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